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Theory of double-resonant Raman spectra in graphene:

intensity and line shape of defect-induced and two-phonon bands

We calculate the double resonant Raman spectrum of graphene, and determine the lines associated to both phonon-defect processes (such as in the D line), and two-phonons ones (such as in the 2D line). Phonon and electronic dispersions reproduce calculations based on density functional theory corrected with GW. Electron-light, -phonon , and -defect scattering matrix elements and the electronic linewidth are explicitly calculated. Defect-induced processes are
simulated by considering different kind of idealized defects. We compare our calculations with experiments and are able to identify the detailed mechanisms in each case.

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